Plasma doping as a tool for the fabrication of ultra-shallow junctions

In the plasma doping technique, a plasma is created near a substrate and a voltage applied to that substrate causes ions to be extracted across the plasma sheath and implanted. The method has been considered a potential alternative to conventional beamline ion implantation because of its high throughput and simpler, smaller architecture. Recent work has shown that the method can be applied to the production of ultra-shallow junctions. Junctions have been made which offer trade-offs between electrical activation and junction depth that are better than those achieved for beamline implants. Use of the technique in combination with SPE anneals offers the promise of further improvements.