DocumentCode :
3176859
Title :
Plasma doping as a tool for the fabrication of ultra-shallow junctions
Author :
Liebert, Reuel B. ; Walther, Steven R. ; Felch, Susan B. ; Fang, Ziwei ; Koo, Bon-Woong ; Hacker, David
Author_Institution :
Varian Semicond. Equip. Associates Inc., Gloucester, MA, USA
fYear :
2000
fDate :
6-6 Dec. 2000
Firstpage :
23
Lastpage :
27
Abstract :
In the plasma doping technique, a plasma is created near a substrate and a voltage applied to that substrate causes ions to be extracted across the plasma sheath and implanted. The method has been considered a potential alternative to conventional beamline ion implantation because of its high throughput and simpler, smaller architecture. Recent work has shown that the method can be applied to the production of ultra-shallow junctions. Junctions have been made which offer trade-offs between electrical activation and junction depth that are better than those achieved for beamline implants. Use of the technique in combination with SPE anneals offers the promise of further improvements.
Keywords :
doping profiles; integrated circuit technology; ion implantation; plasma materials processing; plasma sheaths; solid phase epitaxial growth; SPE anneals; beamline implants; beamline ion implantation; electrical activation; ion extraction; ion implantation; junction depth; plasma; plasma doping; plasma doping technique; plasma sheath; process architecture; substrate applied voltage; throughput; ultra-shallow junction fabrication; ultra-shallow junctions; Annealing; Doping; Fabrication; Implants; Ion implantation; Plasma immersion ion implantation; Plasma sheaths; Production; Throughput; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2000, The first international workshop on, Extended abstracts of
Conference_Location :
Makuhari, Japan
Print_ISBN :
4-89114-008-9
Type :
conf
DOI :
10.1109/IWIT.2000.928772
Filename :
928772
Link To Document :
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