DocumentCode
3176988
Title
A fully integrated high power RF MEMS switch in package
Author
Sung Jun Kim ; Yang Zhang ; Minfeng Wang ; Bachman, Mark ; Li, G.P.
Author_Institution
Univ. of California, Irvine, Irvine, CA, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
934
Lastpage
940
Abstract
We report a high power laminate switch for radio frequency (RF) applications. This switch can be embedded within RF circuits or serve as a standalone component. For various RF applications, we demonstrated how switch, RF and mechanical performances are correlated to each other by varying the design parameters. Low contact resistance, 0.3 Ω and decent RF performance, -0.35 dB insertion loss and -18 dB isolation at 9 GHz were achieved.
Keywords
contact resistance; microswitches; semiconductor device packaging; RF applications; RF circuits; contact resistance; design parameters; frequency 9 GHz; fully integrated high power RF MEMS switch; high power laminate switch; insertion loss; mechanical performances; radio frequency applications; resistance 0.3 ohm; Contact resistance; Force; Microswitches; Radio frequency; Substrates; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159706
Filename
7159706
Link To Document