DocumentCode
3177053
Title
Full SiC half-bridge module for high frequency and high temperature operation
Author
Kicin, Slavo ; Pettersson, Sami ; Bianda, Enea ; Canales, Francisco ; Cottet, Didier ; Cavallini, Giacomo ; Hamers, Joris
Author_Institution
ABB Corp. Res., Baden-Dättwil, Switzerland
fYear
2015
fDate
26-29 May 2015
Firstpage
950
Lastpage
956
Abstract
An innovative power electronics half-bridge module concept exploiting 3D-design features was proposed to achieve low stray inductance and balanced current sharing, and thus module fast switching capability. In order to verify the switching performance of the concept, a 1.2 kV / 100 A full SiC module was designed using electromagnetic simulations and fabricated exploiting state-of-the-art but still conventional packaging technologies. Afterwards the module was tested and benchmarked to commercially available SiC modules. Performed tests confirmed fast switching capability of the proposed concept and showed more than 20 % lower switching losses compared to the benchmarked commercial modules.
Keywords
bridge circuits; power semiconductor devices; semiconductor device models; semiconductor device packaging; silicon compounds; wide band gap semiconductors; 3D design features; SiC; current 100 A; current sharing; electromagnetic simulations; half-bridge module; module fast switching capability; packaging technologies; power electronics; switching losses; voltage 1.2 kV; Logic gates; MOSFET; Prototypes; Silicon carbide; Substrates; Switches; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159709
Filename
7159709
Link To Document