• DocumentCode
    3177053
  • Title

    Full SiC half-bridge module for high frequency and high temperature operation

  • Author

    Kicin, Slavo ; Pettersson, Sami ; Bianda, Enea ; Canales, Francisco ; Cottet, Didier ; Cavallini, Giacomo ; Hamers, Joris

  • Author_Institution
    ABB Corp. Res., Baden-Dättwil, Switzerland
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    950
  • Lastpage
    956
  • Abstract
    An innovative power electronics half-bridge module concept exploiting 3D-design features was proposed to achieve low stray inductance and balanced current sharing, and thus module fast switching capability. In order to verify the switching performance of the concept, a 1.2 kV / 100 A full SiC module was designed using electromagnetic simulations and fabricated exploiting state-of-the-art but still conventional packaging technologies. Afterwards the module was tested and benchmarked to commercially available SiC modules. Performed tests confirmed fast switching capability of the proposed concept and showed more than 20 % lower switching losses compared to the benchmarked commercial modules.
  • Keywords
    bridge circuits; power semiconductor devices; semiconductor device models; semiconductor device packaging; silicon compounds; wide band gap semiconductors; 3D design features; SiC; current 100 A; current sharing; electromagnetic simulations; half-bridge module; module fast switching capability; packaging technologies; power electronics; switching losses; voltage 1.2 kV; Logic gates; MOSFET; Prototypes; Silicon carbide; Substrates; Switches; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159709
  • Filename
    7159709