• DocumentCode
    3177206
  • Title

    Analysis and mitigation of NBTI aging in register file: An end-to-end approach

  • Author

    Kothawade, Saurabh ; Chakraborty, Koushik ; Roy, Sanghamitra

  • Author_Institution
    Electr. & Comput. Eng., Utah State Univ., Logan, UT, USA
  • fYear
    2011
  • fDate
    14-16 March 2011
  • Firstpage
    1
  • Lastpage
    7
  • Abstract
    Analysis and tackling of NBTI wearout effects are important design objectives in microprocessor designs. Application induced stress, combined with circuit-architectural design styles creates widely diverging wearout characteristics in a processor datapath. Moreover, in a typical case in desktop computing, different applications can interleave. This interleaving can cause destructive interference in stress patterns leading to substantially worse aging effect than an isolated application. We investigate NBTI wearout degradation in a register file using a comprehensive circuit-architectural analysis of SRAM cells, and show that recently proposed periodic bit inversion is unable to cope with interleaving application induced stress. We propose two novel micro-architecture techniques to mitigate this limitation. Our techniques reduce the Static Noise Margin (SNM) by 2.2X, while improving the degradation uncertainty by 14X over current state-of-the-art techniques. Our overhead analysis shows that both area and power overheads of our proposed technique can be minimal in the context of the reliability improvement it provides.
  • Keywords
    SRAM chips; ageing; integrated circuit reliability; microprocessor chips; semiconductor storage; NBTI mitigation; NBTI wearout effect; degradation uncertainty; destructive interference; microarchitecture technique; microprocessor design; negative bias temperature instability; register file; reliability improvement; static noise margin; stress pattern; Aging; Decoding; Degradation; Random access memory; Registers; Reliability; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ISQED), 2011 12th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • ISSN
    1948-3287
  • Print_ISBN
    978-1-61284-913-3
  • Type

    conf

  • DOI
    10.1109/ISQED.2011.5770695
  • Filename
    5770695