DocumentCode :
3177206
Title :
Analysis and mitigation of NBTI aging in register file: An end-to-end approach
Author :
Kothawade, Saurabh ; Chakraborty, Koushik ; Roy, Sanghamitra
Author_Institution :
Electr. & Comput. Eng., Utah State Univ., Logan, UT, USA
fYear :
2011
fDate :
14-16 March 2011
Firstpage :
1
Lastpage :
7
Abstract :
Analysis and tackling of NBTI wearout effects are important design objectives in microprocessor designs. Application induced stress, combined with circuit-architectural design styles creates widely diverging wearout characteristics in a processor datapath. Moreover, in a typical case in desktop computing, different applications can interleave. This interleaving can cause destructive interference in stress patterns leading to substantially worse aging effect than an isolated application. We investigate NBTI wearout degradation in a register file using a comprehensive circuit-architectural analysis of SRAM cells, and show that recently proposed periodic bit inversion is unable to cope with interleaving application induced stress. We propose two novel micro-architecture techniques to mitigate this limitation. Our techniques reduce the Static Noise Margin (SNM) by 2.2X, while improving the degradation uncertainty by 14X over current state-of-the-art techniques. Our overhead analysis shows that both area and power overheads of our proposed technique can be minimal in the context of the reliability improvement it provides.
Keywords :
SRAM chips; ageing; integrated circuit reliability; microprocessor chips; semiconductor storage; NBTI mitigation; NBTI wearout effect; degradation uncertainty; destructive interference; microarchitecture technique; microprocessor design; negative bias temperature instability; register file; reliability improvement; static noise margin; stress pattern; Aging; Decoding; Degradation; Random access memory; Registers; Reliability; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
ISSN :
1948-3287
Print_ISBN :
978-1-61284-913-3
Type :
conf
DOI :
10.1109/ISQED.2011.5770695
Filename :
5770695
Link To Document :
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