Analysis of TSV-to-TSV coupling with high-impedance termination in 3D ICs

It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSV-to-TSV coupling is not negligible, it is highly likely that TSV-to-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used S-parameter-based methods under the assumption that all ports in their simulation structures are under 50-Ω termination condition. However, this 50-Ω termination condition does not occur at ports (pins) of gates inside a 3D IC. In this paper, therefore, we analyze TSV-to-TSV coupling in 3D ICs based on a lumped circuit model with a realistic high-impedance termination condition. We also analyze how channel affect TSV-to-TSV coupling differently in different frequency ranges. Based on our results, we propose a technique to reduce TSV-to-TSV coupling in 3D ICs.