Title :
Analysis of TSV-to-TSV coupling with high-impedance termination in 3D ICs
Author :
Song, Taigon ; Liu, Chang ; Kim, Dae Hyun ; Lim, Sung Kyu ; Cho, Jonghyun ; Kim, Joohee ; Pak, Jun So ; Ahn, Seungyoung ; Kim, Joungho ; Yoon, Kihyun
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
It is widely-known that coupling exists between adjacent through-silicon vias (TSVs) in 3D ICs. Since this TSV-to-TSV coupling is not negligible, it is highly likely that TSV-to-TSV coupling affects crosstalk significantly. Although a few works have already analyzed coupling in 3D ICs, they used S-parameter-based methods under the assumption that all ports in their simulation structures are under 50-Ω termination condition. However, this 50-Ω termination condition does not occur at ports (pins) of gates inside a 3D IC. In this paper, therefore, we analyze TSV-to-TSV coupling in 3D ICs based on a lumped circuit model with a realistic high-impedance termination condition. We also analyze how channel affect TSV-to-TSV coupling differently in different frequency ranges. Based on our results, we propose a technique to reduce TSV-to-TSV coupling in 3D ICs.
Keywords :
three-dimensional integrated circuits; 3D IC; TSV-to-TSV coupling analysis; high-impedance termination; lumped circuit model; parameter-based methods; resistance 50 ohm; through-silicon via; Capacitance; Couplings; Crosstalk; Impedance; Integrated circuit modeling; Three dimensional displays; Through-silicon vias; 3D IC; Capacitive termination; Coupling; Crosstalk; High impedance termination; Through-Silicon Via (TSV);
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-61284-913-3
DOI :
10.1109/ISQED.2011.5770714