DocumentCode :
3177626
Title :
Selective Metallization for a W-band Meander Line TWT
Author :
Sengele, Sean ; Hongrui Jiang ; Booske, John H. ; van der Weide, Daniel ; Bettermann, A.
Author_Institution :
Univ. of Wisconsin, Madison
fYear :
2007
fDate :
15-17 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
The development of terahertz (THz) millimetre-wave (MMW) regime vacuum electronics necessitates the concurrent development of adequate fabrication techniques. Since the size of vacuum electronic devices is proportional to their frequency of operation, fabricating them for the THz and mmw regimes requires fabrication techniques capable of producing millimeter and micron-scale features. Monolithic microfabrication technologies such as deep reactive ion etching (DRIE) have been used widely in the MEMS community for years to achieve these sorts of feature sizes.
Keywords :
metallisation; micromechanical devices; travelling wave tubes; MEMS; W-band meander line TWT; fabrication technique; selective metallization process; vacuum electronics; Circuits; Drives; Electromagnetic coupling; Fabrication; Flanges; Metallization; Micromechanical devices; Silicon; Testing; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference, 2007. IVEC '07. IEEE International
Conference_Location :
Kitakyushu
Print_ISBN :
1-4244-0633-1
Type :
conf
DOI :
10.1109/IVELEC.2007.4283214
Filename :
4283214
Link To Document :
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