Title :
Numerical backstepping for diameter control of silicon ingots in the Czochralski process
Author :
Rahmanpour, P. ; Hovd, Morten
Author_Institution :
Eng. Cybern. Dept., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
The Czochralski crystallization process is an important process for the production of monocrystalline silicon for semiconductor and solar cell applications. We use a design procedure motivated by backstepping for the control of crystal diameter - since the system model is not of a form for which backstepping is directly applicable. Similarly to backstepping, the design procedure is iterative, and allows for application of problem-specific engineering understanding at each stage of the procedure.
Keywords :
crystal growth from melt; crystal structure; crystallisation; ingots; nonlinear control systems; silicon; solar cells; Czochralski crystallization process; Si; crystal diameter; design procedure; diameter control; monocrystalline silicon production; nonlinear controller; numerical backstepping; problem-specific engineering; semiconductor production; silicon ingot; solar cell application; Backstepping; Crystallization; Heat transfer; Heating; Process control; Silicon;
Conference_Titel :
Decision and Control (CDC), 2012 IEEE 51st Annual Conference on
Conference_Location :
Maui, HI
Print_ISBN :
978-1-4673-2065-8
Electronic_ISBN :
0743-1546
DOI :
10.1109/CDC.2012.6426740
