Title :
RF sputtered and sol-gel prepared MoO3-TiO2 thin film gas sensors
Author :
Galatsis, K. ; Li, Y.X. ; Wlodarski, W. ; Comini, E. ; Faglia, G. ; Sberveglieri, G.
Author_Institution :
Sensor Technol. Lab., R. Melbourne Inst. of Technol., Vic., Australia
Abstract :
MoO3-TiO2 thin films have been prepared by RF sputtering (RF) and by the sol-gel (SG) method. The films were deposited on alumina and single crystal silicon substrates. SEM characterization has shown the formation of a well-developed crystal stucture for the SG film and a porous morphology for the RF when annealed at 800°C. The MoO3-TiO2 thin films gas sensing properties to NO2 and CO has been investigated. The RF and SG fabricated MoO3-TiO2 possess different gas sensing properties attributed to the fabrication and resulting morphological difference of the thin films. The SG films had a response of 1.75 to 25 ppm of CO and 2.8 to 2 ppm of NO2, while the RF films had a response of 1.5 to 30 ppm of CO and a response of 2 to 3 ppm of NO2
Keywords :
adsorption; annealing; crystal morphology; gas sensors; molybdenum compounds; scanning electron microscopy; semiconductor thin films; sol-gel processing; sputter deposition; sputtered coatings; thin film devices; titanium compounds; 800 C; CO; MoO3-TiO2; NO2; RF sputtered films; SEM characterization; alumina substrate; annealed films; conductance change; fabrication difference; morphological difference; porous morphology; single crystal silicon substrate; sol-gel prepared films; thin film gas sensors; Composite materials; Conductivity; Gas detectors; Inorganic materials; Radio frequency; Sensor phenomena and characterization; Sputtering; Temperature sensors; Thin film sensors; Transducers;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE
Conference_Location :
Budapest
Print_ISBN :
0-7803-6646-8
DOI :
10.1109/IMTC.2001.928853
