Interface properties of the oxide grown on Si at low temperatures using point to plane corona discharge

The interface trap density of oxide film grown on silicon at low temperatures using point to plane corona discharge is studied. For oxide grown with this method with a 1-cm electrode distance, an interface density on the order of 10¹³ to 10¹⁴ eV^-1 cm^-2 is obtained from the high-frequency current-voltage curves. This is higher than the interface trap density of the oxide grown by the conventional high-temperature oxidation method. The interface trap density can be lowered by changing such processing parameters as the distance between the electrodes and the corona discharge current density