Title :
Parameter extraction methodology and validation for an electro-thermal physics-based NPT IGBT model
Author :
Sigg, J. ; Türkes, P. ; Kraus, R.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
A physics-based dynamic electro-thermal nonpunch through (NPT) insulated gate bipolar transistor (IGBT) model is presented. For the electrical and thermal parameters an extraction methodology is given. The model reproduces the static, dynamic and short circuit characteristics of the IGBT
Keywords :
insulated gate bipolar transistors; semiconductor device models; short-circuit currents; thermal analysis; dynamic characteristics; electrical parameters; electro-thermal physics-based NPT IGBT model; insulated gate bipolar transistor; nonpunch through IGBT; parameter extraction methodology; short circuit characteristics; static characteristics; thermal parameters; Insulated gate bipolar transistors; MOSFET circuits; Parameter extraction; Power MOSFET; Power semiconductor switches; Snubbers; Switching circuits; Thermal management of electronics; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.629008
