A new PSpice power MOSFET model with temperature dependent parameters: evaluation of performances and comparison with available models

Author

Leonardi, C. ; Raciti, A. ; Frisina, F. ; Letor, R.

Author_Institution

Dept. of Electr., Electron. & Syst. Eng., Catania Univ., Italy

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

1174

Abstract

A new PSpice model of power MOSFETs has been developed aiming to account for the parameter variations with the temperature. The paper discusses the new model in detail, showing the close correlation between the new quantities introduced and the experimental evidence that requires an improvement of the simulations carried out by similar available models. Comparison and evaluations of simulation runs (in static and dynamic conditions) obtained by the proposed model and other power MOSFET PSpice models are also presented and discussed. Finally, performances in terms of accuracy, simulation times, advantages and disadvantages of each model in different circuit applications are reported and compared with the experimental traces relative to actual devices

Keywords

SPICE; power MOSFET; semiconductor device models; thermal analysis; PSpice power MOSFET model; dynamic conditions; parameter variations; performance evaluation; simulation times; static conditions; temperature dependent parameters; Capacitance; Circuit simulation; Diodes; MOSFET circuits; Performance evaluation; Power MOSFET; Power system modeling; SPICE; Semiconductor process modeling; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.629009

Filename

629009