Title :
Using NMOS transistors as switches for accuracy and area-efficiency in large-scale addressable test array
Author :
Pan, Weiwei ; Ren, Jie ; Zheng, Yongjun ; Shi, Zheng ; Yan, Xiaolang
Author_Institution :
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
Abstract :
Addressable test array needs switches to select and isolate testing structures; however, switches occupy extra chip area and limit the array size and measurement accuracy due to additional switch leakage. In this paper, we implement the switch by NMOS transistor, thus improve the design of addressable test array on array size, measurement accuracy as well as area efficiency. Simulations in a 65 nm technology have verified this technique´s feasibility and reliability. A large 64×64 array using this 65 nm technology has been designed in a systematic flow and manufactured for silicon data, which further confirms the effectiveness of the presented technique.
Keywords :
field effect transistor switches; NMOS transistor switch; area-efficiency; large-scale addressable test array; measurement accuracy; silicon data; size 65 nm; systematic flow; Arrays; Electrical resistance measurement; Logic gates; MOSFETs; Testing; Addressable test array; accuracy; area efficiency; large scale;
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-61284-913-3
DOI :
10.1109/ISQED.2011.5770778