DocumentCode
3178761
Title
Using NMOS transistors as switches for accuracy and area-efficiency in large-scale addressable test array
Author
Pan, Weiwei ; Ren, Jie ; Zheng, Yongjun ; Shi, Zheng ; Yan, Xiaolang
Author_Institution
Inst. of VLSI Design, Zhejiang Univ., Hangzhou, China
fYear
2011
fDate
14-16 March 2011
Firstpage
1
Lastpage
6
Abstract
Addressable test array needs switches to select and isolate testing structures; however, switches occupy extra chip area and limit the array size and measurement accuracy due to additional switch leakage. In this paper, we implement the switch by NMOS transistor, thus improve the design of addressable test array on array size, measurement accuracy as well as area efficiency. Simulations in a 65 nm technology have verified this technique´s feasibility and reliability. A large 64×64 array using this 65 nm technology has been designed in a systematic flow and manufactured for silicon data, which further confirms the effectiveness of the presented technique.
Keywords
field effect transistor switches; NMOS transistor switch; area-efficiency; large-scale addressable test array; measurement accuracy; silicon data; size 65 nm; systematic flow; Arrays; Electrical resistance measurement; Logic gates; MOSFETs; Testing; Addressable test array; accuracy; area efficiency; large scale;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-61284-913-3
Type
conf
DOI
10.1109/ISQED.2011.5770778
Filename
5770778
Link To Document