Title :
Characterization of parasitics in microwave devices by comparing S and noise parameter measurements with two different on wafer calibration techniques
Author :
Miranda, J.M. ; Fager, C. ; Zirath, H. ; Sakalas, P. ; Munoz, Susana ; Sebastián, J.L.
Author_Institution :
Fac. de Fisicas, Univ. Complutense de Madrid, Spain
Abstract :
This paper presents a procedure for an accurate characterization of parasitic effects of terminal pads in microwave devices. This procedure is based on the measurement of S and noise parameters of the device with two different sets of calibration standards, and simplifies the process of extracting the parasitic elements of the small signal equivalent circuit
Keywords :
S-parameters; calibration; electric noise measurement; equivalent circuits; high electron mobility transistors; microwave field effect transistors; microwave measurement; semiconductor device noise; HEMT; S parameter measurement; calibration standards; cold FET approach; microwave devices; noise parameter measurement; on wafer calibration techniques; parasitics characterization; small signal equivalent circuit; terminal pads; Calibration; Data mining; Equivalent circuits; Frequency; Integrated circuit noise; Microwave devices; Microwave measurements; Noise measurement; Probes; Semiconductor device noise;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 2001. IMTC 2001. Proceedings of the 18th IEEE
Conference_Location :
Budapest
Print_ISBN :
0-7803-6646-8
DOI :
10.1109/IMTC.2001.928875
