Characterization of Gated Cold Cathode Fabrication Using Standing Thin-Film Technique

Author

Yoshida, Tomoya ; Asano, Tanemasa

Author_Institution

Kyushu Univ., Fukuoka

fYear

2007

fDate

15-17 May 2007

Firstpage

1

Lastpage

2

Abstract

We have proposed a novel process of fabricating a high-aspect-ratio tip structure, which utilizes the bending of a cantilever made of a sputter deposited WSi₂ film induced by ion irradiation. We demonstrated high-current field-electron emission from a gated field emitter array (FEA) fabricated by using the thin-film standing technique. In this paper, characterization of the FEA particularly in terms of emission stability and uniformity is reported. We find an ac-driving is more suitable than a dc-driving in order to decrease the required number of tips in a pixel and to meet the requirement of FED application.

Keywords

cantilevers; cathodes; field emitter arrays; sputter deposition; thin film devices; emission stability; film sputter deposition; gated cold cathode fabrication; gated field emitter array fabrication; high-aspect-ratio tip structure fabrication; high-current field-electron emission; thin-film technique; Argon; Cathodes; Fabrication; Field emitter arrays; Internal stresses; Ion beams; Semiconductor films; Silicides; Sputtering; Transistors; FED; ac-driving; cold cathode; field emitter; internal stress; ion beam irradiation; metal silicide; stress relaxation; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference, 2007. IVEC '07. IEEE International

Conference_Location

Kitakyushu

Print_ISBN

1-4244-0633-1

Type

conf

DOI

10.1109/IVELEC.2007.4283286

Filename

4283286