Title :
Enhancement of anisotropic magnetoresistance in zigzag graphene nanodevices
Author :
Subramani, A. ; Sen, Arunabha
Author_Institution :
SRM Res. Inst., SRM Univ., Chennai, India
Abstract :
We theoretically investigate the anisotropic charge transport behavior of zigzag graphene nanodots (zGNDs) connected to ferromagnetic nanoelectrodes. It turns out that when a zGND is attached to Ni-electrodes through S-linkers, the spin-polarized conductance exhibits oscillatory behavior with a maximum peak around θ ≈ 18°. A small change in the anisotropic spin polarization can thus cause a sudden jump in the device conductance. The two states of electronic conductance obtained by simply tuning the electrode magnetization may well serve as 1s and 0s to find potential utilities in designing spintronic logic circuits at the nanoscale.
Keywords :
electrical conductivity; enhanced magnetoresistance; ferromagnetic materials; fullerene devices; graphene; magnetisation; magnetoelectronics; magnetoresistive devices; nanomagnetics; nanostructured materials; nickel; spin polarised transport; C-Ni; anisotropic charge transport behavior; anisotropic magnetoresistance; anisotropic spin polarization; electrode magnetization; ferromagnetic nanoelectrodes; oscillatory behavior; spin-polarized conductance; spintronic logic circuits; zigzag graphene nanodevices; zigzag graphene nanodots; Correlation; Electrodes; Finite impulse response filters; Frequency locked loops; Magnetic tunneling; Magnetosphere; Nickel; Anisotropic Tunneling Magnetoresistance; Graphene Nanodot; Magnetic Tunnel Junction; Non-equilibrium Green´s Function; Spin-polarized Charge Transport; Tunneling Anisotropic Magnetoresistance;
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
DOI :
10.1109/ICANMEET.2013.6609276
