A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions

Author

Mozume, T. ; Kasai, J. ; Simoyama, T. ; Gopal, A.V. ; Yoshida, H.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan

fYear

2003

fDate

22-27 June 2003

Firstpage

544

Abstract

This paper reports the effects of the AlAs interface layer on the quantum wells (QW) and intersubband transitions (ISBT) properties. High quality QWs were obtained by having 4-6 multilayers of AlAs interface layer and increasing In composition in InGaAs to accommodate strain. The X-ray diffraction spectra of typical InGaAs/AlAs/AlAsSb QWs clearly demonstrate the high quality. Using coupled double quantum wells with 2.8 nm In_0.82Ga_0.18As, ultra low saturation intensity (Is) of 34 fJ/μm² was obtained from the multipass waveguide geometry sample. These results open the door for realization of ultra-first all-optical ISBT switch.

Keywords

X-ray diffraction; X-ray spectra; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; interface phenomena; optical communication; optical multilayers; optical switches; optical waveguides; semiconductor quantum wells; transition moments; 2.8 nm; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb quantum well structures; X-ray diffraction spectra; coupled double quantum wells; intersubband transitions; multipass waveguide geometry; optical multilayer; ultrafast all-optical switches; Communication switching; High speed optical techniques; Indium gallium arsenide; Nonlinear optics; Optical devices; Optical saturation; Optical switches; Pulse measurements; Space vector pulse width modulation; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1313606

Filename

1313606