Title :
A novel InGaAs/AlAs/AlAsSb quantum well structures for ultrafast and low-power all-optical switches using intersubband transitions
Author :
Mozume, T. ; Kasai, J. ; Simoyama, T. ; Gopal, A.V. ; Yoshida, H.
Author_Institution :
FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
This paper reports the effects of the AlAs interface layer on the quantum wells (QW) and intersubband transitions (ISBT) properties. High quality QWs were obtained by having 4-6 multilayers of AlAs interface layer and increasing In composition in InGaAs to accommodate strain. The X-ray diffraction spectra of typical InGaAs/AlAs/AlAsSb QWs clearly demonstrate the high quality. Using coupled double quantum wells with 2.8 nm In0.82Ga0.18As, ultra low saturation intensity (Is) of 34 fJ/μm2 was obtained from the multipass waveguide geometry sample. These results open the door for realization of ultra-first all-optical ISBT switch.
Keywords :
X-ray diffraction; X-ray spectra; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; interface phenomena; optical communication; optical multilayers; optical switches; optical waveguides; semiconductor quantum wells; transition moments; 2.8 nm; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb quantum well structures; X-ray diffraction spectra; coupled double quantum wells; intersubband transitions; multipass waveguide geometry; optical multilayer; ultrafast all-optical switches; Communication switching; High speed optical techniques; Indium gallium arsenide; Nonlinear optics; Optical devices; Optical saturation; Optical switches; Pulse measurements; Space vector pulse width modulation; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1313606
