Nonreciprocal millimeter wave propagation in slot guiding structures using magnetoplasmons

A full-wave matrix spectral-domain approach for complex anisotropy is used to find the propagation constants in the forward and reverse directions (i.e. the nonreciprocal phase and attenuation properties) for suspended slotline layered structures. A DC bias magnetic field, B/sub 0/, is used to generate permittivity anisotropy in the semiconductor layer. The B/sub 0/ field is normal to the propagation direction, and its inclination angle phi to the interface is varied. Numerical results between 45 and 85 GHz for a GaAs semiconductor layer are obtained. Dominant-mode dispersive behavior is controlled by the semiconductor substrate characteristics, geometric dimensions, and magnetic field bias magnitude and angle in the Voigt configuration. Differences between forward and reverse attenuation constants and phase constants show increases with increasing frequency. These differences appear to be largest for small phi (>