Title :
Timing yield estimation of carbon nanotube-based digital circuits in the presence of nanotube density variation and metallic-nanotubes
Author :
Ghavami, B. ; Raji, M. ; Pedram, H.
Author_Institution :
Amirkabir Univ. of Technol., Tehran, Iran
Abstract :
Carbon Nanotube Field Effect Transistors (CNFETs) show great promise to become successor of silicon CMOS because of its excellent electrical properties. However, CNFET-based circuits will face great fabrication challenges that will translate into imperfection and variability and lead to significant yield reduction. In this paper, we address the timing yield problem of CNFET-based sequential digital circuits. We propose an analytical approach to parametric timing yield prediction of CNFET-based circuits. In our approach, a statistical method is used to get the timing yield based on the delay distributions of register-to-register paths in a circuit with respect to carbon nanotube density variation and metallic-nanotubes. The superiority of the proposed technique is studied and verified against Monte Carlo simulation.
Keywords :
CMOS digital integrated circuits; Monte Carlo methods; carbon nanotubes; field effect transistors; sequential circuits; C; CNFET-based sequential digital circuits; Monte Carlo simulation; carbon nanotube density variation; carbon nanotube field effect transistors; carbon nanotube-based digital circuits; delay distributions; electrical property; metallic-nanotubes; nanotube density variation; parametric timing yield prediction; silicon CMOS circuit; statistical method; timing yield estimation; CNTFETs; Capacitance; Delay; Integrated circuit modeling; Logic gates; Registers; Carbon Nanotube Field Effect Transistor (CNFET); Metallic Nanotube; Timing; Variation; Yield;
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-61284-913-3
DOI :
10.1109/ISQED.2011.5770806