Analysis of thin film ferroelectric aging

Author

Fisch, D.E. ; Abt, N.E. ; Bens, F.N. ; Miller, W.D. ; Pramanik, T. ; Saiki, W. ; Shepherd, W.H.

Author_Institution

Nat. Semicond., Santa Clara, CA, USA

fYear

1990

fDate

27-29 March 1990

Firstpage

237

Lastpage

242

Abstract

The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<>

Keywords

CMOS integrated circuits; SRAM chips; ageing; dielectric hysteresis; ferroelectric storage; ferroelectric thin films; life testing; materials testing; reliability; NVRAM; acceleration models; effects of temperature; electric field; ferroelectric capacitors; ferroelectric memory aging; log of time; memory products; number of polarization reversals; read/write cycles; retention lifetime; retention predictions; signal loss; testing ferroelectric memory reliability; thin film ferroelectric; write endurance predictions; Aging; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Polarization; Temperature; Testing; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium, 1990. 28th Annual Proceedings., International

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/RELPHY.1990.66093

Filename

66093