Title :
Analysis of thin film ferroelectric aging
Author :
Fisch, D.E. ; Abt, N.E. ; Bens, F.N. ; Miller, W.D. ; Pramanik, T. ; Saiki, W. ; Shepherd, W.H.
Author_Institution :
Nat. Semicond., Santa Clara, CA, USA
Abstract :
The effects of temperature, electric field, and the number of polarization reversals on ferroelectric memory aging are analyzed on ferroelectric capacitors and memory products. The signal loss proceeds linearly with the log of time. A relationship between read/write cycles and retention lifetime is established. Acceleration models and methods for testing ferroelectric memory reliability are proposed. Based on these models, retention and write endurance predictions are made.<>
Keywords :
CMOS integrated circuits; SRAM chips; ageing; dielectric hysteresis; ferroelectric storage; ferroelectric thin films; life testing; materials testing; reliability; NVRAM; acceleration models; effects of temperature; electric field; ferroelectric capacitors; ferroelectric memory aging; log of time; memory products; number of polarization reversals; read/write cycles; retention lifetime; retention predictions; signal loss; testing ferroelectric memory reliability; thin film ferroelectric; write endurance predictions; Aging; Capacitors; Electrodes; Ferroelectric films; Ferroelectric materials; Polarization; Temperature; Testing; Transistors; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/RELPHY.1990.66093
