Title :
Low temperature aluminum induced crystallization of HWCVD deposited a-Si:H
Author :
Pandey, Vikas ; Dusane, R.O.
Author_Institution :
Dept. of Metall. Eng. & Mater. Sci., IIT Bombay, Mumbai, India
Abstract :
Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.
Keywords :
annealing; chemical vapour deposition; crystallisation; elemental semiconductors; hydrogen; semiconductor growth; silicon; AIC; HWCVD; Si:H; annealing temperature; hot wire chemical vapour deposition; low temperature aluminum induced crystallization; temperature 473 K; Annealing; Artificial intelligence; Bismuth; Conductivity; Crystallization; Grain size; Substrates; Aluminum Induced Crystallization; Amorphous Silicon; HWCVD; Nanocrystalline Silicon;
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
DOI :
10.1109/ICANMEET.2013.6609307
