Title :
Constant intermodulation loci measure for power devices using HP 8510 network analyzer
Author :
Ricco, L. ; Locatelli, G.P. ; Calzavara, F.
Author_Institution :
Telettra SpA, Vimercate, Italy
Abstract :
The distortion level of a FET output signal is deeply affected by the radio-frequency (RF) load. A method of characterizing the intermodulation distortion (IMD) behaviour due to loading for power FET amplifier is described. An HP 8510 network analyzer in combination with commonly available measuring equipment is used to determine load reflection coefficient for various load conditions, and relating the value to constant power gain circles drawn on a Smith chart. The locus of points generated allows the selection of the appropriate load for the FET that maximizes the device linearity. An example illustrating the method is discussed.<>
Keywords :
field effect transistors; intermodulation; network analysers; power transistors; solid-state microwave devices; FET output signal; HP 8510 network analyzer; Smith chart; constant power gain; device linearity; distortion level; intermodulation distortion; load reflection coefficient; loading; power devices; Distortion measurement; FETs; Gain measurement; Intermodulation distortion; Power amplifiers; Power measurement; RF signals; Radio frequency; Radiofrequency amplifiers; Reflection;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22017
