Modeling, design and demonstration of low-temperature, low-pressure and high-throughput thermocompression bonding of copper interconnections without solders

High-throughput assembly technologies to form Copper (Cu) interconnections without solders at below 200°C, and pitch below 40μm has been a major challenge in the semiconductor industry. A unique solution has been demonstrated by Georgia Institute of Technology to overcome this grand challenge. This technology utilizes thermocompression bonding to form copper interconnections with process tolerances to accommodate non-coplanarities of bumps and warpage of the substrate, without solders. The bonding pressure applied for thermocompression was 365MPa, to enable Cu bump collapse by 3μm. As thermocompression bonders are generally force-limited to 400N, such high bonding pressures may hinder scalability of this technology to fine pitches with higher I/O densities. This paper addresses this manufacturability challenge with the novel Electroless Palladium Autocatalytic Gold (EPAG) surface finish instead of the standard Electroless Nickel Immersion Gold (ENIG) or Electroless Nickel Electroless Palladium Immersion Gold (ENEPIG) finish, previously used to prevent Cu oxidation for bonding load reduction down to 120MPa.