Title :
Etching of oxide semiconductors by ultrashort laser pulses
Author :
Ruthe, David ; Zimmer, Klaus
Author_Institution :
Leibniz-Inst. for Surface Modification eV, Leipzig, Germany
Abstract :
In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.
Keywords :
II-VI semiconductors; high-speed optical techniques; indium compounds; laser beam etching; sapphire; solid lasers; surface topography; tin compounds; titanium; zinc compounds; 120 fs; 293 to 298 K; 775 nm; Al2O3:Ti; ITO; InSnO; Ti: sapphire laser; ZnO; epitaxial samples; indium tin oxide; oxide semiconductor structuring; oxide semiconductors etching; polycrystalline samples; room temperature; ultrashort laser pulses; zinc oxide; Atomic force microscopy; Chemical lasers; Etching; Indium tin oxide; Optical pulses; Photovoltaic cells; Scanning electron microscopy; Semiconductor lasers; Surface topography; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1313642
