DocumentCode :
3180133
Title :
Impedance properties in magnetic-dielectric Zr0.8Cr0.2O2 Nanocrystallites
Author :
Sengupta, Aparajita ; Ram, Sripad
Author_Institution :
Mater. Sci. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India
fYear :
2013
fDate :
24-26 July 2013
Firstpage :
443
Lastpage :
446
Abstract :
A compound Zr0.8Cr0.2O2 upon adding Cr4+(3d2) spins in a dielectric host ZrO2 exhibits impedance, magnetic and other functional properties. Small Zr0.8Cr0.2O2 crystallites (5 nm average size) of a cubic ZrO2-like phase are obtained by heating a polymer precursor at 425 K temperature in ~0.6 bar pressure in an autoclave and then at 775 K for 2 h in ambient air. The sample reflects the Curie point (TC) as a distinct peak/transition in the real (Z\´) and imaginary (Z") impedance. The TC shifts from 505 K to ~585 K with increasing the frequency from 0.1 kHz to 100.0 kHz. The Z\´-value traces a plateau below ~20.0 kHz and that widens progressively from 555 K to 615 K. The Z"-value exhibits a relaxation peak at ~8 kHz at 555 K and that shifts to higher frequencies with increasing temperature, reaching ~50 kHz at 615 K. The activation energy of relaxation of charge carriers drops from 1.76 eV over 550-580 K to 0.63 eV over 580-625 K in spin-disorder just above the TC.
Keywords :
Curie temperature; carrier relaxation time; crystallites; electric impedance; ferroelectric Curie temperature; ferroelectric semiconductors; ferroelectric transitions; ferromagnetic materials; heat treatment; magnetic semiconductors; magnetoelectric effects; nanofabrication; nanomagnetics; nanostructured materials; semiconductor growth; zirconium compounds; Cr4+(3d2) spins; Curie point; TC shifts; Z\´-value traces; Zr0.8Cr0.2O2; activation energy; ambient air; charge carrier relaxation drops; crystallites; cubic ZrO2-like phase; dielectric host; distinct peak-transition; electron volt energy 1.76 eV to 0.63 eV; ferromagnetic semiconductor; frequency 0.1 kHz to 100.0 kHz; heating; imaginary Z" impedance; impedance properties; magnetic properties; magnetic-dielectric nanocrystallites; polymer precursor; real Z\´ impedance; spin disorder; temperature 425 K; temperature 775 K; time 2 h; Magnetic semiconductors; Manganese; Electrical relaxation; Impedance; Magnetodielectrics; Nanocrystallites;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Nanomaterials and Emerging Engineering Technologies (ICANMEET), 2013 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-1377-0
Type :
conf
DOI :
10.1109/ICANMEET.2013.6609340
Filename :
6609340
Link To Document :
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