Advances in InP HEMT technology for high frequency applications

Author

Smith, P.M. ; Nichols, K. ; Kong, W. ; MtPleasant, L. ; Pritchard, D. ; Lender, R. ; Fisher, J. ; Actis, R. ; Dugas, D. ; Meharry, D. ; Swanson, A.W.

Author_Institution

BAE Syst., Nashua, NH, USA

fYear

2001

fDate

2001

Firstpage

9

Lastpage

14

Abstract

This paper reviews the remarkable progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Despite possessing superior performance, widespread use of InP HEMTs has to date been hindered by their relatively high cost (as compared with GaAs-based devices). However, the commercialization of HEMTs with high-indium-content InGaAs channels now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4 and 6-inch)

Keywords

III-V semiconductors; field effect MMIC; field effect analogue integrated circuits; high electron mobility transistors; indium compounds; microwave field effect transistors; reviews; 4 inch; 6 inch; InAlAs-InGaAs; InP; InP HEMT technology; InP substrate scaling; MMIC; commercialization; high frequency analog applications; high frequency applications; high-In-content InGaAs channels; metamorphic HEMTs; microwave applications; noise figure; Frequency; Gallium arsenide; HEMTs; High power amplifiers; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; Microwave amplifiers; Noise figure; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929005

Filename

929005