Monolithic integration of laser diode and magneto-optic waveguide

Author

Sakurai, Kazumasa ; Yokoi, Hideki ; Mizumoto, Tetsuya ; Miyashita, Daisuke ; Nakano, Yoshiaki

Author_Institution

Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan

fYear

2003

fDate

22-27 June 2003

Firstpage

602

Abstract

Monolithic integration of the optical isolator with a GaInAsP/InP laser diode can be achieved by employing a selective area growth technique. In order to investigate the feasibility of the monolithic integration approach, we must realize a laser diode on an active region and a magneto-optic waveguide on a passive region of an identical substrate. In this article, we report the fabrication of a Fabri-Perot laser diode and a magneto-optic waveguide on the selective-area-grown wafer.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; magneto-optical devices; magneto-optical effects; optical fabrication; optical isolators; optical waveguides; semiconductor lasers; Fabri-Perot laser diode; GaInAsP-InP; GaInAsP-InP laser diode; area growth technique; laser diode; magneto-optic waveguide; monolithic integration; optical isolator; selective-area-grown wafer; Diode lasers; Garnets; Integrated optics; Isolation technology; Isolators; Magnetic semiconductors; Monolithic integrated circuits; Optical devices; Optical waveguides; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on

Print_ISBN

0-7803-7734-6

Type

conf

DOI

10.1109/CLEOE.2003.1313664

Filename

1313664