InP-based VCSELs for 1.55 μm wavelength range

Author

Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

fYear

2001

fDate

2001

Firstpage

15

Lastpage

16

Abstract

We present a new approach for InP-based long-wavelength VCSELs based on buried tunnel junctions. Excellent cw laser performance has been demonstrated for the 1.45-1.85 μm wavelength range, such as sub-mA threshold currents, 0.9 V threshold voltage (at λ=1.55 μm), 30-100 Ω series resistance, differential efficiencies >25%, 90°C cw operation, stable polarization and single-mode operation with SSR of the order 50 dB

Keywords

III-V semiconductors; buried layers; indium compounds; laser modes; light polarisation; quantum well lasers; surface emitting lasers; 0.9 V; 1.45 to 1.85 mum; 1.55 μm wavelength range; 1.55 mum; 25 percent; 30 to 100 ohm; 90 C; InAlAs-InGaAs; InP; InP-based VCSELs; InP-based long-wavelength VCSELs; SSR; buried tunnel junctions; cw laser performance; cw operation; differential efficiencies; series resistance; single-mode operation; stable polarization; strained layer quantum wells; threshold currents; threshold voltage; Dielectrics; Fiber lasers; Mirrors; Power generation; Reflectivity; Surface emitting lasers; Thermal conductivity; Thermal resistance; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929006

Filename

929006