Title :
Transmission characteristics of 1.3 μm Fabry-Perot laser diodes integrated with spot size converter for 2.5 Gbit/s applications
Author :
Bouadma, Noureddine ; Lucatero, Luis ; Colson, Véronique ; Barthe, Françoise ; Leclerc, Denis ; Gentner, Jean-Louis
Author_Institution :
OPTO+, Groupement d´´Interet Econ., Marcoussis, France
Abstract :
This article demonstrates the application of highly efficient Fabry-Perot lasers to intra-office STM-16 fiber communication systems at the wavelength of 1.3 μm. Low power penalty of 0.05 dB through a 12 ps/nm fiber was measured at 25°C and 85°C. A low coupling loss of 1 dB of a laser to a cleaved SMF fiber is achieved. This device consists of an active stripe followed by a passive intracavity spot size converter. Subsequently, this paper demonstrates the feasibility of non-perturbing intracavity tapers through the application of selective area growth and their applicability to short haul optical systems
Keywords :
MOCVD; integrated optoelectronics; laser cavity resonators; optical fibre couplers; optical transmitters; quantum well lasers; 1 dB; 1.3 mum; 2.5 Gbit/s; 25 C; 85 C; Fabry-Perot laser diodes; InAsP MQW stripe; InAsP-InGaAsP; InGaAsP barriers; MOVPE; active stripe; cleaved SMF fiber; intra-office STM-16 fiber communication systems; low coupling loss; low power penalty; nonperturbing intracavity tapers; passive intracavity spot size converter; selective area growth; short haul optical systems; spot size converter integration; transmission characteristics; Epitaxial growth; Etching; Fabrication; Fabry-Perot; Performance evaluation; Plasma applications; Quantum well devices; Silicon compounds; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929009
