InAs nanostructure devices fabricated by AFM oxidation process

Author

Sasa, S. ; Inoue, M.

Author_Institution

Dept. of Electr. Eng., Osaka Inst. of Technol., Japan

fYear

2001

fDate

2001

Firstpage

35

Lastpage

38

Abstract

We describe atomic force microscope (AFM) oxidation processes developed for nanofabrication of InAs/(Al)GaSb heterostructures. The fabrication process is based on anodization that occurs between the AFM tip and the semiconductor surfaces. We systematically studied the oxidation characteristics and nanofabrication capabilities for each constituent material in order to develop a simple fabrication processes utilizing AFM oxidation. Device characteristics verifying the nanofabrication capability for each AFM oxidation process are described

Keywords

III-V semiconductors; anodisation; atomic force microscopy; indium compounds; nanotechnology; oxidation; semiconductor heterojunctions; InAs nanostructure device; InAs-AlGaSb; InAs-GaSb; InAs/AlGaSb heterostructure; InAs/GaSb heterostructure; anodization; atomic force microscope oxidation; nanofabrication; semiconductor surface; Atomic force microscopy; Electron mobility; Etching; Fabrication; Gallium arsenide; Intrusion detection; Nanofabrication; Nanoscale devices; Oxidation; Scanning probe microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929012

Filename

929012