Title :
Charge storage effect of the vertically stacked InAs nanodots embedded in Al0.5Ga0.5As matrix
Author :
Koike, K. ; Li, S. ; Komai, H. ; Sasa, S. ; Inoue, M. ; Yano, M.
Author_Institution :
New Mater. Res. Center, Osaka Inst. of Technol., Japan
Abstract :
This report describes the memory effect of an Al0.5Ga 0.5As/GaAs field-effect (FE) structure which contains vertically aligned InAs nanodots in the barrier layer. The FE structure is grown by molecular beam epitaxy using Stranski-Krastanow islands as the nanodots. Charge storage effect of the nanodots is analyzed by a capacitance-voltage measurement and resulted in a hysteresis loop due to the stable electron trapping at nanodot potentials. The amount of charge for the long-term memory retention at 300 K is estimated to be ~14 nC/cm 2, which is promising for memory device applications of the FE structure
Keywords :
III-V semiconductors; aluminium compounds; electron traps; gallium arsenide; indium compounds; island structure; molecular beam epitaxial growth; semiconductor quantum dots; semiconductor storage; 300 K; Al0.5Ga0.5As-GaAs; Al0.5Ga0.5As/GaAs field effect structure; InAs; Stranski-Krastanow island growth; barrier layer; capacitance-voltage characteristics; charge storage; electron trapping; embedded InAs nanodots; hysteresis loop; memory effect; molecular beam epitaxy; vertical stack; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Electrons; Gallium arsenide; Iron; Material storage; Molecular beam epitaxial growth; Nanoscale devices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929013
