Title :
Gas-source MBE growth of metamorphic InP/In0.5Al0.5 As/In0.5Ga0.5As/InAsP high-electron-mobility structures on GaAs substrates
Author :
Ouchi, K. ; Mishima, T. ; Kudo, M. ; Ohta, H.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Advanced metamorphic high-electron-mobility heterostructures were grown by gas-source molecular beam epitaxy (gas-source MBE). These structures consist of an InGaAs/InAsP composite channel layer to improve breakdown voltage and a thin InP stopper layer under the n-InGaAs contact layer to enable long-term reliability and highly selective etching for mass production. Even though the graded buffer layer was thin, 0.45 μm, misfit dislocations, observed by transmission-electron microscopy (TEV), were confined effectively to this thin buffer layer. High mobilities of over 9000 cm2/Vs were obtained on the thin compositionally graded InAlAs buffer layer when the As composition of the InAsP sub-channel layer was less than 0.2
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor growth; GaAs substrate; InAlAs buffer layer; InGaAs/InAsP composite channel layer; InP stopper layer; InP-In0.5Al0.5As-In0.5Ga0.5 As-InAsP; InP/In0.5Al0.5As/In0.5Ga0.5 As/InAsP heterostructure; breakdown voltage; compositional grading; gas-source MBE growth; mass production; metamorphic high electron mobility transistor; misfit dislocation; n-InGaAs contact layer; reliability; selective etching; transmission electron microscopy; Breakdown voltage; Buffer layers; Etching; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929016
