DocumentCode
3180474
Title
Semiconductor photonic waveguide structures made by a reactive beam etching technique
Author
Oku, Satoshi ; Shibata, Yasuo
Author_Institution
NTT Photonics Labs., Atsugi, Japan
fYear
2001
fDate
2001
Firstpage
75
Lastpage
78
Abstract
A Br2-N2 reactive beam etching technique that produces smooth and vertical sidewall etching shapes has been developed and applied to the construction of semiconductor photonic waveguide devices. The low-loss and polarization-insensitive deep-ridge waveguides made by the etching technique have been used to form high performance multimode interference couplers and arrayed waveguide grating filters. Deeply etched submicrometer wide grooves were demonstrated as the surface grating for DFB lasers, which were made without a regrowth process
Keywords
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical couplers; optical fabrication; optical losses; optical waveguide filters; optical waveguides; sputter etching; waveguide lasers; Br2-N2; Br2-N2 reactive beam etching technique; DBR lasers; DFB lasers; InP-InGaAs-InP; InP/InGaAs/InP wafer; arrayed waveguide grating filters; deeply etched submicrometer wide grooves; low-loss polarization-insensitive deep-ridge waveguides; multimode interference couplers; semiconductor photonic waveguide structures; smooth vertical sidewall etching shapes; surface grating; Arrayed waveguide gratings; Couplers; Etching; Filters; Interference; Polarization; Semiconductor laser arrays; Semiconductor waveguides; Shape; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location
Nara
ISSN
1092-8669
Print_ISBN
0-7803-6700-6
Type
conf
DOI
10.1109/ICIPRM.2001.929022
Filename
929022
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