Title :
InAs/GaAs quantum dot lasers with InGaP cladding layer grown by solid-source molecular beam epitaxy
Author :
Yeh, N.T. ; Liu, W.-S. ; Chen, S.H. ; Chiu, P.-J. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
This paper presents the lasing properties of InAs/GaAs quantum dot (QD) lasers with InGaP cladding layers grown by solid-source molecular beam epitaxy. These Al-free lasers exhibit a threshold current density of 138 A/cm2, an internal loss of 1.35 cm-1 and an internal quantum efficiency of 31% at room temperature. At low temperature, a very high characteristic temperature of 425 K and very low threshold current density of 30 A/cm2 are measured
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum dots; 20 to 300 K; 31 percent; InAs-GaAs; InAs/GaAs quantum dot lasers; InGaP; InGaP cladding layer; characteristic temperature; internal loss; internal quantum efficiency; lasing properties; room temperature; solid-source molecular beam epitaxy; threshold current density; Capacitive sensors; Chemical lasers; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Quantum dot lasers; Solid lasers; Temperature; Threshold current; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929025
