GaInAsN based lasers for the 1.3 and 1.5 μm wavelength range

Author

Fischer, M. ; Gollub, D. ; Reinhardt, M. ; Forchel, A.

Author_Institution

Tech. Phys., Wurzburg Univ., Germany

fYear

2001

fDate

2001

Firstpage

101

Lastpage

104

Abstract

Since the introduction of the GaAs based material system GaInAsN for long wavelength laser diodes several years ago, rapid progress has been made in improving the performance of these devices. We present some of our efforts and results in the optimized growth of GaInAsN/GaAs quantum well structures in the 1.3-1.55 μm wavelength region by solid source MBE using an RF plasma source for the generation of active nitrogen. Based on this preliminary work, we have fabricated GaInAsN LDs with emission wavelengths up to >1.5 μm. Laser performance data for 1.3 and 1.5 μm devices are presented and compared

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor quantum wells; waveguide lasers; 1.3 to 1.55 mum; GaInAsN LDs; GaInAsN based lasers; GaInAsN/GaAs quantum well structures; GaInNAs-GaAs; RF plasma source; SCH laser structure; active nitrogen generation; emission wavelength; laser performance data; long wavelength laser diodes; optimized growth; photoluminescence spectra; ridge waveguide LDs; solid source MBE; Diode lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Plasma temperature; Radio frequency; Surface emitting lasers; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929028

Filename

929028