Title :
Optical transitions in new semiconductor alloy GaAs1-xBi x with temperature-insensitive band gap
Author :
Yoshida, Junichi ; Yamamizu, Hideaki ; Kita, Takashi ; Oe, Kunishige
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
We performed photoreflectance (PR) spectroscopy in order to investigate fundamental band-edge transitions of GaAs1-xBi x alloys. GaBi-mole fractions of GaAs1-xBix investigated in this study are 0, 0.005, 0.012 and 0.024. The PR spectra for the four samples exhibit Franz-Keldysh oscillations (FKO) above the band-gap energy due to the built-in electric field. The FKO signal enables us to evaluate the band-gap energy. We found that a small amount of the Bi content succeeds in producing a temperature-insensitive band gap. The reduced effective mass ratio between the heavy- and light-hole bands μhh/μlh was estimated by fast Fourier-transform analysis for the PR spectra. These results show that μhh/μlh is larger for higher Bi content
Keywords :
III-V semiconductors; MOCVD coatings; band structure; effective mass; energy gap; fast Fourier transforms; gallium arsenide; photoreflectance; semiconductor epitaxial layers; visible spectra; Franz-Keldysh oscillations; GaAs1-xBix; GaAsBi; GaBi-mole fractions; MOVPE growth; PR spectra; band-gap energy; built-in electric field; effective mass ratio; fast Fourier-transform analysis; fundamental band-edge transitions; heavy-hole bands; light-hole bands; optical transitions; photoreflectance spectroscopy; temperature-insensitive band gap; Bismuth; Effective mass; Epitaxial growth; Epitaxial layers; Fiber lasers; Gallium arsenide; Photonic band gap; Semiconductor lasers; Semiconductor materials; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929030
