Synthesis and studies of silicon nanowires — By PECVD

One dimensional nanostructures such as nanowires have a wide range of applications. Silicon nanowires (SiNWs) were synthesized using plasma enhanced chemical vapour deposition (PECVD) on p-Si (111) wafer. Gold is used as a catalyst for the growth of the SiNWs. Based on our fundamentals understanding of Vapor-liquid-solid (VLS) nano wire growth mechanism, different levels of growth controls have been achieved. Gold catalyst deposited and annealing at different temperature (450°C, 500°C and 550°C for 4 and 8 min) and to find out optimized temperature of the gold nano droplets ~20 nm and good pattern at 550°C. The Si nanowire grown as diameter is 500 to 970 nm and length 5-6 μm identified by the FESEM.