DocumentCode
3180672
Title
Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)
Author
Li, Yuxin ; Huang, Alex ; Motto, Kevin
Author_Institution
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
238
Abstract
The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented
Keywords
failure analysis; power semiconductor switches; semiconductor device models; semiconductor device reliability; thyristors; GTO-MOSFET hybrid power semiconductor device; emitter turn-off thyristor; failure mechanism; snubberless operation analysis; snubberless switching capability; snubberless turn-off; unity turn-off gain condition; Cathodes; Equivalent circuits; Failure analysis; Power semiconductor devices; Power semiconductor switches; Snubbers; Temperature; Thyristors; Turning; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN
0-7803-5769-8
Type
conf
DOI
10.1109/PEDS.1999.794567
Filename
794567
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