Title :
Analysis of the snubberless operation of the emitter turn-off thyristor (ETO)
Author :
Li, Yuxin ; Huang, Alex ; Motto, Kevin
Author_Institution :
Bradley Dept. of Electr. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented
Keywords :
failure analysis; power semiconductor switches; semiconductor device models; semiconductor device reliability; thyristors; GTO-MOSFET hybrid power semiconductor device; emitter turn-off thyristor; failure mechanism; snubberless operation analysis; snubberless switching capability; snubberless turn-off; unity turn-off gain condition; Cathodes; Equivalent circuits; Failure analysis; Power semiconductor devices; Power semiconductor switches; Snubbers; Temperature; Thyristors; Turning; Voltage;
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
DOI :
10.1109/PEDS.1999.794567
