• DocumentCode
    3180678
  • Title

    Atomic flux divergence-based AC electromigration model for signal line reliability assessment

  • Author

    Zhong Guan ; Marek-Sadowska, Malgorzata

  • Author_Institution
    Electr. & Comput. Eng., UC Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    2155
  • Lastpage
    2161
  • Abstract
    In this paper, we develop an AC electromigration (EM) model for signal lines manufactured with copper dual damascene process. For the first time, the healing factor of AC EM is quantitatively modeled. To measure EM reliability of interconnects considering timing margins we introduce AC EM functional lifetime. We also develop an atomic flux divergence (AFD)-based void growth model to explain the resistance curves of measured results and calculate the functional EM lifetime of AC signal lines without extracting parameters from experiments. We demonstrate fidelity of the proposed model with measured results for both the healing factor and the rate of resistance change.
  • Keywords
    VLSI; copper; electromigration; AC EM functional lifetime; AC electromigration model; AFD; Cu; EM reliability; atomic flux divergence; copper dual damascene process; resistance curves; signal line reliability assessment; void growth model; Atomic measurements; Copper; Current density; Mathematical model; Reliability; Resistance; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159901
  • Filename
    7159901