DocumentCode
3180678
Title
Atomic flux divergence-based AC electromigration model for signal line reliability assessment
Author
Zhong Guan ; Marek-Sadowska, Malgorzata
Author_Institution
Electr. & Comput. Eng., UC Santa Barbara, Santa Barbara, CA, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
2155
Lastpage
2161
Abstract
In this paper, we develop an AC electromigration (EM) model for signal lines manufactured with copper dual damascene process. For the first time, the healing factor of AC EM is quantitatively modeled. To measure EM reliability of interconnects considering timing margins we introduce AC EM functional lifetime. We also develop an atomic flux divergence (AFD)-based void growth model to explain the resistance curves of measured results and calculate the functional EM lifetime of AC signal lines without extracting parameters from experiments. We demonstrate fidelity of the proposed model with measured results for both the healing factor and the rate of resistance change.
Keywords
VLSI; copper; electromigration; AC EM functional lifetime; AC electromigration model; AFD; Cu; EM reliability; atomic flux divergence; copper dual damascene process; resistance curves; signal line reliability assessment; void growth model; Atomic measurements; Copper; Current density; Mathematical model; Reliability; Resistance; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159901
Filename
7159901
Link To Document