DocumentCode :
3180678
Title :
Atomic flux divergence-based AC electromigration model for signal line reliability assessment
Author :
Zhong Guan ; Marek-Sadowska, Malgorzata
Author_Institution :
Electr. & Comput. Eng., UC Santa Barbara, Santa Barbara, CA, USA
fYear :
2015
fDate :
26-29 May 2015
Firstpage :
2155
Lastpage :
2161
Abstract :
In this paper, we develop an AC electromigration (EM) model for signal lines manufactured with copper dual damascene process. For the first time, the healing factor of AC EM is quantitatively modeled. To measure EM reliability of interconnects considering timing margins we introduce AC EM functional lifetime. We also develop an atomic flux divergence (AFD)-based void growth model to explain the resistance curves of measured results and calculate the functional EM lifetime of AC signal lines without extracting parameters from experiments. We demonstrate fidelity of the proposed model with measured results for both the healing factor and the rate of resistance change.
Keywords :
VLSI; copper; electromigration; AC EM functional lifetime; AC electromigration model; AFD; Cu; EM reliability; atomic flux divergence; copper dual damascene process; resistance curves; signal line reliability assessment; void growth model; Atomic measurements; Copper; Current density; Mathematical model; Reliability; Resistance; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/ECTC.2015.7159901
Filename :
7159901
Link To Document :
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