A naturally soft-switched high-frequency gate drive circuit for power MOSFETs/IGBTs

Author

Tang, S.C. ; Hui, S.Y.R. ; Chung, H.

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

Volume

1

fYear

1999

fDate

1999

Firstpage

246

Abstract

An isolated soft-switched gate drive using a coreless PCB transformer is described. The switching frequency of the gate drive electronics is set at 8 MHz and the diameter of the coreless PCB transformer is merely 0.46 cm. Because of the high frequency operation involved, the gate drive electronics has to be soft-switched in order to achieve high energy efficiency and reduce the gate drive power consumption. With the use of a modulation technique, the gate drive circuit can operate a power MOSFET and a power IGBT over a wide frequency range from 0.1 Hz to at least 500 kHz. The power consumption of the gate drive is kept below 1 W throughout the switching frequency range

Keywords

driver circuits; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power semiconductor switches; power transformers; printed circuits; switching circuits; 0.1 Hz to 500 kHz; 0.46 cm; 8 MHz; coreless PCB transformer; energy efficiency; gate drive electronics; gate drive power consumption; high frequency operation; isolated soft-switched HF gate drive circuit; modulation technique; power IGBTs; power MOSFETs; switching frequency; switching frequency range; Circuits; Electrical resistance measurement; Energy consumption; Insulated gate bipolar transistors; MOSFETs; Pulse transformers; Switching frequency; Switching loss; Thermal stresses; Transformer cores;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on

Print_ISBN

0-7803-5769-8

Type

conf

DOI

10.1109/PEDS.1999.794568

Filename

794568