Title :
Design of lateral IGBT protection circuit for smart power integration
Author :
Luo, Junyang ; Liang, Yung C. ; Cho, Byung-Jin
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Monolithic integration of lateral insulated gate bipolar transistor (LIGBT) in power integrated circuits is a current research topic. The overcurrent protection scheme is usually necessary to be built as part of the functions in power integrated circuits. The protection circuit requires to distinguish various fault conditions and to react differently based on the device safe operating area (SOA) limitation. At the same time, the circuit should also be relatively concise and suitable for integration. In this paper, a concise gate drive protection circuit is proposed to provide the complete function of overcurrent protection for LIGBT. The performance of the circuit was verified with experimental results. The implementation of the proposed circuit on lateral IGBT is also discussed and the simulation results are presented
Keywords :
driver circuits; insulated gate bipolar transistors; monolithic integrated circuits; overcurrent protection; power bipolar transistors; power integrated circuits; SOA; fault conditions; gate drive protection circuit; lateral IGBT protection circuit; monolithic integration; overcurrent protection; overcurrent protection scheme; performance; power integrated circuits; safe operating area; smart power integration; Circuit faults; Circuit simulation; Delay effects; Diodes; Insulated gate bipolar transistors; Power electronics; Power integrated circuits; Semiconductor optical amplifiers; Surge protection; Threshold voltage;
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
DOI :
10.1109/PEDS.1999.794569
