Title :
New SOI structure for LIGBT with improved thermal and latch-up characteristics
Author :
Liang, Yung C. ; Xu, Shuming ; Ren, Changhong ; Luo, Junyang
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
To improve SOI LIGBT thermal and latch-up properties, a new metal sinker structure is proposed in this paper. The modified structure has a metal sinker connecting the cathode to the substrate. The metal sinker can divert heat from the top of the devices to the substrate, and it can also collect part of the hole current to the substrate. The simulation results show that under the same operating conditions, the temperature of new structure is much lower than that of the conventional structure. As a consequence, the latch-up capability in the new structure is improved. Fabrication work on the metal sinker is currently underway
Keywords :
cathodes; heat sinks; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; silicon-on-insulator; substrates; thermal analysis; SOI structure; cathode; hole current; latch-up capability; latch-up characteristics; lateral IGBT; metal sinker structure; operating conditions; simulation; substrate; thermal characteristics; Anodes; Cathodes; Dielectric substrates; Heat sinks; Insulated gate bipolar transistors; Temperature; Thermal conductivity; Thermal engineering; Thermal resistance; Thyristors;
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
DOI :
10.1109/PEDS.1999.794570
