• DocumentCode
    3180815
  • Title

    Micro-Raman analysis of molar fraction in polycrystalline Inx Ga1-x for traveling liquidus zone growth method

  • Author

    Islam, M.R. ; Verma, Prabhat ; Yamada, M. ; Tatsumi, M. ; Kinoshita, K.

  • Author_Institution
    Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    129
  • Lastpage
    132
  • Abstract
    InxGa1-xAs is a tunable lattice matched bulk substrate material for fabricating InGaAs-based optoelectronic devices. Spatial homogeneity in molar fraction for such substrates is essential. It is planned to grow compositionally homogeneous InxGa1-xAs bulk substrate using InxGa 1-xAs polycrystals with graded molar fraction profile as the starting material in the traveling liquidus zone growth method. To analyze these starting materials, particularly the molar fraction, non-destructive techniques are essential. In this paper, we report some results on micro-Raman studies in these polycrystalline starting materials with various values of molar fraction, and a polycrystalline InxGa1-xAs cylindrical sample with graded molar fraction profile. Estimated molar fraction using Raman scattering for various polycrystalline samples show good agreements with those examined by chemical analysis. We further report the effect of surface condition on our results, using micro-Raman technique
  • Keywords
    III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; semiconductor growth; zone melting; InxGa1-x polycrystalline single crystal; InGaAs; InGaAs optoelectronic device; chemical analysis; compositional homogeneity; micro-Raman scattering; molar fraction; nondestructive technique; traveling liquidus zone growth; tunable lattice matched bulk substrate material; Chemical analysis; Crystalline materials; Crystals; Indium gallium arsenide; Lattices; Optical materials; Optical scattering; Optoelectronic devices; Raman scattering; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929046
  • Filename
    929046