Title :
Effects of the barrier height on optical anisotropy of (110)-oriented strained quantum wells
Author_Institution :
Dept. of Electr. & Control Syst. Eng., Shimane Univ., Matsue, Japan
Abstract :
We theoretically investigate the polarization anisotropies of the interband transitions in strained quantum wells (QWs) grown on (110)-oriented substrates. We adopt the six-band effective-mass theory in which the spin-orbit split-off (SO) bands are included. The polarization-dependent optical matrix elements at the Brillouin zone center in GaxIn1-xP/Al0.5In0.5 P QWs having various well widths grown on (110)GaAs are calculated as functions of Ga content x. Furthermore, the calculation is performed assuming various barrier heights. In is shown that the SO band in the barrier layer has the critical influence on the behavior of the anisotropy of the optical matrix elements when the well width is narrow
Keywords :
Brillouin zones; III-V semiconductors; aluminium compounds; birefringence; effective mass; gallium compounds; indium compounds; optical rotation; semiconductor quantum wells; spin-orbit interactions; (110)-oriented strained quantum wells; Brillouin zone center; GaxIn1-xP/Al0.5In0.5P; GaInP-AlInP; barrier height; interband transitions; optical anisotropy; polarization anisotropies; polarization-dependent optical matrix elements; six-band effective-mass theory; spin-orbit split-off bands; Anisotropic magnetoresistance; Electron optics; Geometrical optics; Optical control; Optical mixing; Optical polarization; Quantum mechanics; Substrates; Vertical cavity surface emitting lasers; Wave functions;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929056
