A simple high frequency CMOS transconductor

Author

Singh, S.P. ; Hanson, J.V. ; Vlach, J.

Author_Institution

Dept. of Electr. Eng., Waterloo Univ., Ont., Canada

fYear

1989

fDate

1-2 June 1989

Firstpage

76

Lastpage

79

Abstract

A transconductor utilizing only two transistors is presented. It is based upon standard inverter configurations and does not need matching of NMOS and PMOS transistors or of the power supply voltages. The reduction in nonlinearity is achieved by maintaining a zero offset condition. The circuit is not affected by variations in body effect as sources and substrates are connected to fixed voltages. Although the inverter has a low signal level handling capability ( approximately=300 mV for a total harmonic distortion of 1%), it can be improved by utilizing two inverters. This leads to a larger dynamic range and has no noticeable effect on the bandwidth. On the basis of this transconductor, a wideband integrator is developed, with independent adjustment of quality factor and unity-gain frequency.<>

Keywords

CMOS integrated circuits; integrating circuits; 300 mV; HF; NMOS transistor; PMOS transistors; analog signal processing; bandwidth; dynamic range; high frequency CMOS transconductor; inverter; nonlinearity reduction; power supply voltages; quality factor; total harmonic distortion; unity-gain frequency; wideband integrator; zero offset; Circuits; Dynamic range; Frequency; Inverters; MOS devices; MOSFETs; Power supplies; Total harmonic distortion; Transconductors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Computers and Signal Processing, 1989. Conference Proceeding., IEEE Pacific Rim Conference on

Conference_Location

Victoria, BC, Canada

Type

conf

DOI

10.1109/PACRIM.1989.48309

Filename

48309