Title :
Theoretical analysis of transient processes in lateral p-n junction photodiodes
Author :
Tsutsui, Naoya ; Khmyrova, Irina ; Ryzhii, V. ; Vaccaro, P.O. ; Taniyama, H. ; Aida, T.
Author_Institution :
Univ. of Aizu, Japan
Abstract :
We present an analytical device model for quantum well lateral p-n junction photodiodes (LJPDs) which takes into account the features of the carrier transport in LJPDs and their geometry. These features ensure short transit times and a low capacitance. The developed model is used to calculate the LJPD characteristics as functions of the signal frequency, bias voltage and structural parameters
Keywords :
photodiodes; quantum well devices; semiconductor device models; transient analysis; LJPD characteristics; analytical device model; bias voltage; carrier transport; lateral p-n junction photodiodes; low capacitance; quantum well lateral p-n junction photodiodes; short transit times; signal frequency; structural parameters; transient processes; Analytical models; Frequency; Geometry; P-n junctions; Photodiodes; Quantum capacitance; Solid modeling; Structural engineering; Transient analysis; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929063
