InP/InGaAsP wafer-bonded vertically coupled X-crossing multiple channel optical add-drop multiplexer

Author

Raburn, M.A. ; Liu, B. ; Okuno, Y. ; Bowers, J.E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2001

fDate

2001

Firstpage

166

Lastpage

169

Abstract

A vertically coupled InP/InGaAsP crossed waveguide optical add-drop multiplexer (OADM) has been realized through the use of wafer bonding. Designed for signals in the 1550-nm range, this novel device requires only a single epitaxial growth and illustrates the use of vertical optical interconnects for the three-dimensional routing of optical signals. To our knowledge, it is also one of the first optical vertically coupled devices with no horizontally coupled counterpart

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optics; multiplexing equipment; optical interconnections; wafer bonding; wavelength division multiplexing; 1550 nm; 3D photonic integrated circuits; InP-InGaAsP; WDM; single epitaxial growth; three-dimensional optical signal routing; vertical optical interconnects; vertically coupled InP/InGaAsP crossed waveguide optical add-drop multiplexer; vertically coupled waveguides; wafer bonding; Epitaxial growth; Indium phosphide; Optical add-drop multiplexers; Optical coupling; Optical design; Optical devices; Optical interconnections; Optical waveguides; Signal design; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On

Conference_Location

Nara

ISSN

1092-8669

Print_ISBN

0-7803-6700-6

Type

conf

DOI

10.1109/ICIPRM.2001.929067

Filename

929067