Title :
A 110 GHz look-up table based InP HEMTs large-signal model including impact ionization effects
Author :
Orzati, A. ; Schreurs, D. ; Pergola, L. ; Benedickter, H. ; Homan, O. ; Bächtold, W.
Author_Institution :
Lab. for Electromagn. Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
We have developed a procedure to extract a look-up table based large-signal model for InP HEMTs which achieves good performances up to 110 GHz. The model is derived from a previous work with some modifications in order to take into account impact ionization and millimeter-wave effects. A logarithmic frequency sweep is used to speed up both the measurements and the data processing. In this way we reduced significantly the number of measured frequency points while keeping a good resolution in the low frequency range, which is important for modelling impact ionization effects
Keywords :
III-V semiconductors; S-parameters; equivalent circuits; harmonics; high electron mobility transistors; impact ionisation; indium compounds; millimetre wave field effect transistors; semiconductor device models; table lookup; 110 GHz; InP; InP HEMTs; S-parameters; data processing; equivalent circuit; higher order harmonics; impact ionization; logarithmic frequency sweep; look-up table based large-signal model; measured frequency points; millimeter-wave effects; Equivalent circuits; Frequency measurement; Gallium arsenide; HEMTs; Impact ionization; Indium phosphide; MODFETs; Millimeter wave measurements; Millimeter wave technology; Table lookup;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929088
