Title :
High power density and power added efficiency of Al0.5In 0.5P/InGaAs doped-channel HFETs
Author :
Chiu, H.C. ; Yang, S.C. ; Chan, Y.-J. ; Kuo, J.M.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
Al0.5In0.5P/In0.15Ga0.85 As doped-channel HFETs (DCFETs) demonstrate a high breakdown voltage, a high power density, and a high linearity for microwave power device applications due to the improvement of a larger ΔEc (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds=3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that the 3rd-order inter-modulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dBm for devices with a 1 mm-wide gate
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; intermodulation; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device measurement; 17 dB; 2.4 GHz; 59 percent; Al0.5In0.5P-In0.15Ga0.85 As; Al0.5In0.5P/InGaAs doped-channel HFETs; DCFETs; high breakdown voltage; high power density; linear power gain; microwave power device applications; output intercept point; output power density; power added efficiency; third-order intermodulation; two-tone measurement; wide bandgap AlInP Schottky layer; Carrier confinement; Etching; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Linearity; MODFETs; Microwave devices; Schottky barriers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929089
