Title :
0.06 μm gate length metamorphic In0.52Al0.48 As/In0.53Ga0.47As HEMTs on GaAs with high f T and fMAX
Author :
Bollaert, S. ; Cordier, Y. ; Zaknoune, M. ; Happy, H. ; Lepilliet, S. ; Cappy, A.
Author_Institution :
Dept. Hyperfrequences et Semicond., Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
Abstract :
State-of-the art metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on a GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with our devices. Cutoff frequency fT and maximum oscillation frequency fmax are 260 GHz and 490 GHz respectively. To our knowledge, these frequency performances are the highest ever reported for HEMTs on GaAs substrate
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; DC performance; GaAs; GaAs substrate; In0.52Al0.48As-In0.53Ga0.47 As; cutoff frequency; drain-to-source current; extrinsic transconductance; metamorphic HEMT; microwave performance; oscillation frequency; Buffer layers; Gallium arsenide; HEMTs; Indium compounds; Lattices; MODFETs; Silicon; Strain measurement; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929090
