• DocumentCode
    3181484
  • Title

    0.06 μm gate length metamorphic In0.52Al0.48 As/In0.53Ga0.47As HEMTs on GaAs with high f T and fMAX

  • Author

    Bollaert, S. ; Cordier, Y. ; Zaknoune, M. ; Happy, H. ; Lepilliet, S. ; Cappy, A.

  • Author_Institution
    Dept. Hyperfrequences et Semicond., Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    192
  • Lastpage
    195
  • Abstract
    State-of-the art metamorphic In0.52Al0.48As/In0.53Ga0.47 As HEMTs on a GaAs substrate with 60 nanometer gate length is reported. The DC and microwave performance were investigated. Typical drain-to-source current Ids of 600 mA/mm and extrinsic transconductance of 850 mS/mm were obtained with our devices. Cutoff frequency fT and maximum oscillation frequency fmax are 260 GHz and 490 GHz respectively. To our knowledge, these frequency performances are the highest ever reported for HEMTs on GaAs substrate
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; DC performance; GaAs; GaAs substrate; In0.52Al0.48As-In0.53Ga0.47 As; cutoff frequency; drain-to-source current; extrinsic transconductance; metamorphic HEMT; microwave performance; oscillation frequency; Buffer layers; Gallium arsenide; HEMTs; Indium compounds; Lattices; MODFETs; Silicon; Strain measurement; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
  • Conference_Location
    Nara
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6700-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2001.929090
  • Filename
    929090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3181484