Title :
Device performance and transport properties of high gain metamorphic InP/InGaAs heterojunction bipolar transistors at elevated temperature
Author :
Yang, Hong ; Wang, Hong ; Ing Ng, Geok ; Zheng, Haiqun ; Radhakrishnan, K.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
A detailed DC characterization of metamorphic InP/InGaAs/InP DHBT´s in the temperature range of 300 K to 400 K was carried out and the carrier transport properties were investigated. Our experiments reveal that band-to-band recombination is the dominant mechanism for the base current indicating the good base material quality for the metamorphic HBT structures
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; high-temperature electronics; indium compounds; semiconductor device measurement; 300 to 400 K; DC characterization; DC current gain; Gummel plots; InP-InGaAs-InP; band-to-band recombination; base current; base material quality; carrier transport properties; collector currents; common-emitter I-V characteristics; elevated temperature; metamorphic InP/InGaAs/InP DHBT; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Performance gain; Probes; Temperature dependence; Temperature distribution; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929092
